Phosphorus-doped (113) CVD diamond: A breakthrough towards bipolar diamond devices

Marie-Amandine Pinault-Thaury (1) , Solange Temgoua (2) , Rémi Gillet (1) , Hakima Bensalah (1) , Ingrid Stenger (1) , François Jomard (1) , Riadh Issaoui (3) , Julien Barjon (1)

1 GEMAC - Groupe d'Etude de la Matière Condensée
2 IRDEP - Institut de Recherche et Développement sur l'Energie Photovoltaïque
3 LSPM - Laboratoire des Sciences des Procédés et des Matériaux

Among wide bandgap semiconductors, diamond presents physical properties particularly suited for high performance power electronic devices. Growth and doping of chemical vapor deposited (CVD) diamond have been mainly optimized in the conventional (100) crystal orientation, highly studied on (111) surfaces and recently initiated on (113). This last orientation seems very promising, as is shown for intrinsic and p-type doped diamonds. In this work, we report the growth of CVD phosphorus doped diamond films on (113)-oriented substrates. The (113) homoepitaxial layers present a phosphorus content in the range of 7.2 Â 10 16 up to 4.5 Â 10 19 at/cm 3 for thicknesses between 0.6 lm and 4 lm. The high quality and the full incorporation of phosphorus into donor sites found for the (113) crystal orientation open new architecture possibilities for bipolar diamond devices.

Domains: Materials Science [cond-mat.mtrl-sci]

Marie-Amandine Pinault-Thaury, Solange Temgoua, Rémi Gillet, Hakima Bensalah, Ingrid Stenger, et al.. Phosphorus-doped (113) CVD diamond: A breakthrough towards bipolar diamond devices. Applied Physics Letters, 2019, 114 (11), pp.112106. ⟨10.1063/1.5079924⟩. ⟨hal-02407526⟩